Multi-terminal semiconductor device having active element directly mounted on terminal leads



AVALANCHE INJECTION SEMICONDUCTOR DEVICE Filed July 12, 1963 F563 LJ .1

INVENTOR.

OSCAR W. MEMELINK O BY United States Patent C) 3,324,358 AVALANCHE INJEiITlflN SEMECQNDUCTOR DEWQE Oscar Willem Memelinlr, Emmasingel, Eindhoven, Netherlands, assignor to North American Emilips Company, Inc, New York, N.Y., a corporation of Delaware Filed July 12, 1963, Ser. No. 294,574 Claims priority, application Netherlands, July 19, 1962, 281,182 7 Claims. (Cl. 317-235) The invention relates to a semi-conductor device, for example a diode comprising a semi-conductor body and at least two electrodes provided thereon, said device being intended to provide a current-voltage characteristic curve with a region of negative differential resistance by avalanche injection between said electrodes. The inven tion furthermore relates to particularly efficient methods of manufacturing such semi-conductor devices.

The known semi-conductor devices of the kind set forth are described inter alia in an article in Solid-state Electronics, 1960, vol. I, pages 54-74 and in British patent specifications 849,476 and 848,477. They are based on the effect of the so-called avalanche injection, which may be described as follows. If in a semi-conductor body e.g. an n-type body with two electrodes consisting of a contact with the associated, high-doped, n-conducting zone, the voltage difference between said electrodes is raised, the electric field intensity in the body initially increases uniformly until with a given external voltage, termed hereinafter the avalanche voltage, a given critical field intensity in the body is attained, at which by the avalanche effect, i.e. by a pulsatory ionisation mechanism similar to that of gas discharges, holes and electrons are released in the semi-conductor body. The holes thus liberated and injected into the body owing to the avalanche mechanism (hence the term avalanche injection) travel towards the negative electrode, where they can be conducted away only with difficulty owing to the presence of the highdoped, n-conducting electrode zone, so that by the accu mulation thereof in front of said electrode an increase in conductivity near said negative electrode is produced in the body. This results in a further increase in field intensity near the other, positive electrode, so that the avalanche injection in this region further increases and the conductivity near the negative electrode continues to rise. Finally a condition is attained in which the electric field corresponding to the external voltage difference is concentrated substantially completely in a thin layer near the positive electrode, whereas a weak electric field prevails in the remaining part of the body, which is flooded by the injected holes. Therefore, the current-voltage characteristic curve of such a device exhibits, apart from a region of a gradually increasing current intensity with the increasing voltage, after the avalanche point is reached, a region of negative differential resistance in which the current intensity strongly increases owing to the avalanche injection mechanism in spite of a decrease in external voltage.

Although the above explanation is given with reference to an n+-n-n+-structure, it equally applies to a p+-p-p+- structure, when the functions of the holes and electrons and the polarity of the voltage are changed. Instead of using low-doped nor p-conducting material, use may be made of substantially intrinsic semi-conductor material. It has also been proposed, in the case of intrinsic semi-conductor material to use a p+-i-n+-structure.

1n the two-electrode embodiment described above these devices are known under the name of avalanche injection diodes. By adding a third elect-rode, for example a p+-electrode to an n+-n-n+-structure, the so-called avalanche injection triode is formed, in which the third elec- 3,324,353 Patented June 6, 196'? trode may be used to act upon the avalanche voltage between the two other electrodes by the injection of holes or as collector electrode for the injected holes.

Since the critical field intensity at which the avalanche mechanism starts is very high, with germanium for example of the order of 10 v./crn., the obtainment of suitably low values of the avalanche voltage and of the associated current intensity would require such extremely small dimensions of the assembly that the manufacture would be particularly difficult. In known practical embodiments of these devices said difficulties were avoided by arranging one of the electrodes on a large, homogeneous body in the form of an alloy electrode with an extremely small surface of the electrode zone and, as the case may be, of the adjacent part of the body, for example having a diameter of 10 whereas the other electrode with a much larger surface establishes an ohmic connection with the bottom side of the body. Athough by utilizing the strong field concentration near this substantially punctiform electrode zone low values of the avalanche voltage with reasonably low current intensities have been achieved, this embodiment has the disadvantage that the dimensions of the zone associated with the electrode, which dimensions determine to a high extent not only the magnitude of the avalanche voltage but also of the associated current intensity, must be ext-remely small. Therefore, the requirements for the fairly difficult manufacture of small electrodes are very severe with respect to the desired reproducibility, while the whole construction is delicate. With this construction it is furthermore ditlicult to render the desired values of the avalanche voltage and of the associated current intensity independent of each other, since both are determined to a considerable extent by the dimensions of the electrode.

The invention has for its object to provide inter alia a novel embodiment of such a semi-conductor device, which does not exhibit the said disadvantages or exhibits them at least only to a highly reduced extent and which can, moreover, be manufactured in a simple, reproduceable manner. The invention has furthermore for its object to provide particularly suitable methods of manufacturing said embodiment.

In accordance with the invention, the semi-conductor body of a semi-conductor device of the kind set forth comprises between the electrodes with the associated semi-conductor electrode zones at least two layers of the same conductivity type and having different conduction values, the layer of the lower conduction being thinner than the layer of higher conduction and having a conduction value which is at least a factor 10 lower than that of the layer of higher conduction, while one of the electrodes with the associated semi-conductor electrode zone is arranged on the layer of lower conduction and a further electrode establishes an ohmic connection to the layer of higher conduction.

Whereas the layer of higher conduction serves mainly only as a supporting body or a substratum for the other layer and to this end establishes an electric connection of minimum resistance to the other layer, the thin layer of the lower conduction is the effective layer in which the avalanche injection process is performed, the thickness of said layer (measured between the electrode zone of the applied electrode and the layer of higher conduction) being therefore chosen as small as is required with respect to the desired avalanche voltage. In order to minimize the voltage drop across the layer of higher conduction with respect to the useful voltage drop across the lower-conduction layer the conduction value of the higher-conduction layer is preferably a factor 00, preferably 1000 higher than that of the lower-conduction layer. The thickness of the higher-conduction layer is was manufactured, which only had a larger diameter of the electrode zone 3 and of the contact 4, i.e. of about 130,11. which corresponds to a contact surface of about l.5 l-= cm. the measurement yielding an analogous characteristic with substantially the same avalanche voltage of 30 v., but with a higher value of the current intensity, which was about 140 ma. with this avalanche voltage.

The curve 10, 11 of FIG. 2 was measured on the diode of FIG. 1 with a negative voltage across the supply wire relative to the plate 6. A further advantage of the semiconductor device according to the invention consists in that it provides an appreciably improved symmetry of the current-voltage characteristic curves for the two senses of the voltage as compared with the known devices. With the known devices in which essentially the field concentration near an electrode of small surface is utilized, said field concentration does not occur in the other voltage direction, so that in one direction the avalanche voltage is not reached or is attained only at a much higher value of the voltage. With the structure according to my invention, however, this field concentration is not utilized or is used to a much smaller extent and the avalanche voltage is determined to a greater extent by the thickness of the lower-conduction layer, so that in the two directions of the voltage an analogous characteristic curve with substantially equal or slightly different values of the avalanche voltage can be obtained. It will appear from the curve 12 of FIG. 2 that with a positive voltage at the supply wire 5 an avalanche voltage of about 20 v. was measured with substantially equal values of the associated current intensities. It appears therefrom that the device according to the invention otters the possibility of obtaining a diode which may be employed in two voltage directions, with values of the avalanche voltages which may, if desired, be substantially equal or differ from each other.

FIGURE 3 shows diagramatically an example of an avalanche triode according to the invention, which only differs from the diode according to FIGURE 1, in that a further n+ electrodes 8, 9 is applied a short distance from the p+ electrodes 3, 4, for instance at a distance of 20 microns. This further electrode consists of the n+ recrystallised layer 8 and the metal part 9, and may be produced by subsequent evaporation and alloying of a gold-antimony alloy containing for instance 2% antimony. On the metal part 9 a supply wire 10 is provided in the same way as on electrodes 3, 4.

By applying a negative voltage to the wire 10 as compared with supply wire 6 the avalanche-voltage 30 of FIGURE 2 can be influenced and varied depending on the value of the voltage difference between 10 and 6. It is also possible to use electrodes 8, 9 as collector electrode, in which case it is biased in the reverse direction by applying a positive voltage. In the latter case it is more favourable to have the electrodes 8, 9 in annular form surrounding electrodes 4, 5.

It should finally be noted that within the scope of the invention different variants are possible to those skilled in the art. Instead of using germanium a different semiconductor, e.g., silicon, may be used, in which case owing to the larger band distance operation at a higher temperature is permitted and lower values of the current intensity with the same avalanche voltage are attainable. The epitaxial growth of a silicon layer on a silicon body may be carried out by the conventional techniques, for example the dissociation of silanes or halogen silanes in the presence of hydrogen. The device shown in FIG. 1 may be changed into an avalanche injection triode by applying an electrode with an electrode zone, e.g., of n-type conductivity, to the layer 1 at the side of the electrodes 3, 4. Although two layers of diiierent conduction values may sufiice, a higher-conduction layer may be provided on the lower-conduction layer, at least locally.

What is claimed is:

1. A semiconductor device adapted to operate by avalanche injection comprising a semiconductive body and at least two opposed electrode connections to said body, said body including between the electrodes at least first, second, and third successive juxtaposed zones of the same conductivity type, the second said zone being thinner than the third said zone and having a relatively low conductance at least a factor 10 lower than that of said third zone, one of said electrodes being connected in an ohmic connection to said third zone, the said first Zone having a much higher conductance than that of said second zone, the other electrode being connected to the said first zone, and means for applying across the two electrodes a voltage of such a polarity as to bias one of the junctions between the three zones in the forward direction and of such a magnitude as to cause avalanche injection to occur within the second zone at an avalanche voltage primarily determined by the thickness of said second zone, whereby the device exhibits a current-voltage characteristic with a negative resistance region.

2. A semiconductor device as claimed in claim 1 wherein the third zone has a conductance at least a factor higher than that of said second zone and has a thickness in the direction of a line connecting the two electrodes of at least 50 microns, and the second zone has a thickness in the same direction smaller than 25 microns.

3. A semiconductor device as set forth in claim 1 wherein the second zone is an epitaxial layer of high resistivity.

4. A semiconductor device as set forth in claim 1 wherein the first zone has a much smaller surface area than the second and third zones.

5. A semiconductor device as set forth in claim 1 wherein the three zones form a p+=p=p+ structure.

6. A semiconductor device as set forth in claim 1 wherein a third electrode is connected to said second zone.

7. A semiconductor device as set forth in claim 1 wherein the three zones form a n+=n=n+ structure.

References Cited FOREIGN PATENTS 9/ 1960 Great Britain. 9/1960 Great Britain.

JOHN W. HUCKERT, Primary Examiner.

J. R. SHEWMAKER, Assistant Examiner.

June 6. 1967 F. E GENTRY 3,324,359

FOUR LAYER SEMICONDUCTOR SWITCH WITH THE THIRD LAYER DEFINING A CONTINUOUS, UNINTERRUPTED INTERNAL JUNCTION Filed Sept. 30, 1963 2 Sheets-Sheet 1 FIGJA. s2 P N P N inn PNP Flew. :2? P P F|G.|C. N P N 1 NPN )z'O-T I l I INVENTORZ FINIS E. ENTRY, BY 14% 44% His ATTORNEY. 

1. A SEMICONDUCTOR DEVICE, COMPRISING: A DIE OF SEMICONDUCTOR MATERIAL HAVING A PLURALITY OF ELECTRODES ON ONE MAJOR FACE THEREOF; A HEADER; AND A CORRESPONDING PLURALITY OF ELECTRICALLY CONDUCTIVE TERMINAL LEADS SUPPORTED BY SAID HEADER AND INSULATED FROM ONE ANOTHER, EACH OF SAID LEADS HAVING A RODLIKE PORTION EXTENDING FROM A GIVEN SURFACE OF SAID HEADER, EACH SAID PORTION HAVING AN END CONTACT AREA, SAID LEAD PORTION ENDS BEING BENT TOWARD EACH OTHER SUCH THAT EACH OF SAID CONTACT AREAS IS ADJACENT AND DIRECTLY ELECTRICALLY BONDED TO A CORRESPONDING ONE OF SAID ELECTRODES SUCH THAT SAID DIE IS SUPPORTED BY SAID END CONTACT AREAS, SAID AREAS BEING COPLANAR AND COMPRISING THE ONLY ELECTRICAL CONNECTIONS TO SAID DIE. 